High Electron Mobility Transistors (HEMTs) are a class of transistors known for their exceptional performance in high-frequency and high-power applications. They are based on heterojunctions, typically utilizing materials such as gallium nitride (GaN) or indium phosphide (InP) to create a high electron mobility channel, enabling faster electron transport compared to traditional silicon-based transistors. HEMTs are widely used in applications requiring high efficiency, such as RF (radio frequency) communication, radar systems, satellite communications, and power amplifiers for wireless networks. The key advantage of HEMTs is their ability to operate at high frequencies and power levels, making them ideal for next-generation technologies like 5G, microwave, and millimeter-wave communications. Their high electron mobility also contributes to improved device performance, reduced heat generation, and better power conversion efficiency.

Our team aims to develop the HEMTs for the high power applications with high temperature stability, Lower leakage current and high threshold voltage.